Electrical and Structural Properties of PVDF/Mgo (7%) Nanocomposites Thin Films at Various Annealing Temperatures
Abstract—Poly (vinylideneflouride)/nano-magnesium oxide (PVDF/MgO) film with 7% MgO loading percentage was annealed at various annealing temperatures ranging from 70°C to 150°C. The PVDF/MgO thin film was fabricated using spin coating technique with a metal-insulator-metal (MIM) configuration. The dielectric and electric properties of PVDF/MgO with respect to annealing temperatures was studied. The PVDF/MgO nanocomposites thin films annealed at temperature of 70°C (AN70-PVDF/MgO) showed an improvement in the properties; dielectric constant value of 26 at 1 kHz frequency compared to un-annealed sample (UN-PVDF/MgO), which is 21 at the same frequency. As the annealing temperatures were increased from 90°C (AN90) to 150°C (AN150-PVDF/MgO), the dielectric constant values were found to gradually decreased from 25 to 12 respectively, which was lower than the UN-PVDF/MgO thin films. AN70-PVDF/MgO also produced relatively low tangent loss (tan δ). The resistivity value of AN70-PVDF/MgO was also found to increase from 3.08x104 Ω.cm (UN- PVDF/MgO) to 4.55x104 Ω.cm. The increased in the dielectric constant, with low tangent loss and high resistivity value suggests that 70°C was the favorable annealing temperature for PVDF/MgO film suitable for the application in electronic devices such as low frequency capacitor.
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